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In semiconductor physics, the Haynes–Shockley experiment was an experiment that demonstrated that diffusion of minority carriers in a semiconductor could result in a current. The experiment was reported in a short paper by Haynes and Shockley in 1948, with a more detailed version published by Shockley, Pearson, and Haynes in 1949.〔 〕〔 〕 The experiment can be used to measure carrier mobility, carrier lifetime, and diffusion coefficient. In the experiment, a piece of semiconductor gets a pulse of holes, for example, as induced by voltage or a short laser pulse. ==Equations== To see the effect, we consider a n-type semiconductor with the length ''d''. We are interested in determining the mobility of the carriers, diffusion constant and relaxation time. In the following, we reduce the problem to one dimension. The equations for electron and hole currents are: : : where the ''j''s are the current densities of electrons (''e'') and holes (''p''), the ''μ''s the charge carrier mobilities, ''E'' is the electric field, ''n'' and ''p'' the number densities of charge carriers, the ''D''s are diffusion coefficients, and ''x'' is position. The first term of the equations is the drift current, and the second term is the diffusion current. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Haynes–Shockley experiment」の詳細全文を読む スポンサード リンク
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